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| KST2222A NPN Epitaxial Silicon Transistor May 2006 KST2222A NPN Epitaxial Silicon Transistor General Purpose Transistor tm 3 Marking 2 1 1P SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25C unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Range Value 75 40 6 600 350 -55 ~ 150 Units V V V mA mW C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain * Test Condition IC = 10A, IE = 0 IC = 10mA, IB = 0 IE = 10A, IC = 0 VCB = 60V, IE = 0 VCE = 10V, IC = 0.1mA VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 150mA VCE = 10V, IC = 500mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 20mA, VCE = 20V, f = 100MHz VCB = 10V, IE = 0, f = 1MHz IC = 100A, VCE = 10V RS = 1K, f = 1MHz VCC = 30V, IC = 150mA VBE = 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Min. 75 40 6 Max. Units V V V A 0.01 35 50 75 100 40 300 0.3 1.0 V V V V MHz 8 4 35 285 pF dB ns ns VCE (sat) VBE (sat) fT Cob NF tON tOFF Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Current Gain Bandwidth Product Output Capacitance Noise Figure Turn On Time Turn Off Time 0.6 300 1.2 2.0 * Pulse Test: Pulse Width300s, Duty Cycle2% (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KST2222A Rev. B KST2222A NPN Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. DC Current Gain V ce=5V Figure 2. Collector-Emitter Saturation Voltage 0.4 250 B=10 Vce(sat), Saturation Current,[V] 125C hfe, Current Gain 200 0.3 75C 25C 150 0.2 125C 100 0.1 75C 25C 50 1 10 100 1 10 100 C o lle c to r C u rre n t, [m A ] Collector Current, [mA] Figure 3. Base-Emitter Saturation Voltage 1.0 Figure 4. Collector - Base Leakage Current 100 B=10 0.9 Leakage current of Collector - Base(nA) V C B = 60V Vbe(sat), Saturation Current,[V] 0.8 10 0.7 0.6 25C 75C 0.5 1 0.4 125C 0.3 0.1 1 10 100 25 50 75 100 125 150 Collector Current, [m A] Tem perature, ['C ] Figure 5. Output Capacitance Figure 6. Power Dissipation vs Ambient Temperature 0.4 IE = 0 f = 1M Hz PD - Power Dissipation (W) 10 0.3 Cob [pF], Capacitance 0.2 1 0.1 0.1 1 10 100 0.0 0 25 50 75 O 100 125 150 V C B [V ], C o lle cto r-B a se V o lta g e Temperature, [ C] 2 KST2222A Rev. B www.fairchildsemi.com KST2222A NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-23 0.20 MIN 2.40 0.10 0.40 0.03 1.30 0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 0.03 0.96~1.14 2.90 0.10 0.12 -0.023 +0.05 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF 0.97REF Dimensions in Millimeters 3 KST2222A Rev. B www.fairchildsemi.com KST2222A NPN Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST(R) ACExTM FASTrTM ActiveArrayTM FPSTM BottomlessTM FRFETTM Build it NowTM GlobalOptoisolatorTM CoolFETTM GTOTM CROSSVOLTTM HiSeCTM DOMETM I2CTM EcoSPARKTM i-LoTM E2CMOSTM ImpliedDisconnectTM EnSignaTM IntelliMAXTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I19 4 KST2222A Rev. B www.fairchildsemi.com |
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